MRFE6VP6300HR5 RF LDMOS Transistor 230MHz 26.5dB 300W NI-780-4

MRFE6VP6300HR5 RF Mosfet LDMOS (Dual) 50V 100mA 230MHz 26.5dB 300W NI-780-4

These high ruggedness devices are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile applications. They are unmatched input and output designs allowing wide frequency range utilization, between 1.8 and 600 MHz

Features

• Unmatched Input and Output Allowing Wide Frequency Range Utilization

• Device can be used Single--Ended or in a Push--Pull Configuration

• Qualified Up to a Maximum of 50 VDD Operation

• Characterized from 30 V to 50 V for Extended Power Range

• Suitable for Linear Application with Appropriate Biasing

• Integrated ESD Protection

• Greater Negative Gate--Source Voltage Range for Improved Class C Operation

• Characterized with Series Equivalent Large--Signal Impedance Parameters

• RoHS Compliant

• NI--780--4 in Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13 inch Reel. For R5 Tape and Reel options, see p. 14.

• NI--780S--4 in Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width, 13 inch Reel. For R5 Tape and Reel options, see p. 14.

n channel mosfet transistor

n channel transistor

MRFE6VP6300HR5 RF LDMOS Transistor 230MHz 26.5dB 300W NI-780-4 Images