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Shenzhen Koben Electronics Co., Ltd.
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IRF640NSTRLPBF N Channel Mosfet Transistor 200V Surface Mount D2PAK

Shenzhen Koben Electronics Co., Ltd.

IRF640NSTRLPBF N Channel Mosfet Transistor 200V Surface Mount D2PAK

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Brand Name : IOR

Model Number : IRF640NSTRLPBF

Certification : CE

Place of Origin : CN

MOQ : 100 pieces

Price : negotiable

Payment Terms : T/T, Western Union, Paypal

Supply Ability : 100Kpcs per year

Delivery Time : 1-2 working days

Packaging Details : Tape and Reel

Goods Condition : Brand New

Part Status : Active

Lead Free / Rohs : Complaint

Function : Mosfet

Mounting Type : Surface Mount

Package : D2PAK

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IRF640NSTRLPBF N-Channel Mosfet Transistor 200V 18A (Tc) 150W (Tc) Surface Mount D2PAK

 Advanced Process Technology 

Dynamic dv/dt Rating  175°C Operating Temperature 

Fast Switching  Fully Avalanche Rated 

Ease of Paralleling 

Simple Drive Requirements

Description

Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF640NL) is available for lowprofile application.

Manufacturer Infineon Technologies
Series HEXFET®
Packaging Tape & Reel (TR)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 67nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1160pF @ 25V
FET Feature -
Power Dissipation (Max) 150W (Tc)
Rds On (Max) @ Id, Vgs 150 mOhm @ 11A, 10V
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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Product Tags:

high power mosfet transistors

      

n channel mosfet transistor

      
Quality IRF640NSTRLPBF N Channel Mosfet Transistor 200V Surface Mount D2PAK for sale

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